WBG/Compound Semiconductor

POMME established the Wide Band Gap Semiconductorspower laboratory in 2020, focusing on the research and development of automotive electronic components and module testing solutions. Our technical team can provide you with a complete test solution for the specifications required by Wide Band Gap Semiconductors, according to your requirements Customized solutions for different needs, we are your most reliable partner!

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Model AF-OST-AC is for dynamic testing.
Model AF-OST-DC is for DC testing.
Model AF-OST-WFR is for on-wafer testing.

Applications

WBG tester Keysight B1506A
Dynamic tester: POMME STA
Thermostream Temptronic TPO45000A(-80 °C to 225 °C)
5 probe station with thermo-chuck form -55 °C to 200 °C
Oven for 100C to 300C
LCR meter as CV testing
B1500A/ 4200/ B2201A/ 707A for low current WAT testing

Extend Application

DC: IGBT/MODFET/DIODE/GaN
1. IGBT: Ices, Iges, Vge(th), Vce(on), Vces, Vges, Vbr(ce)
2. MOSFET: Idss, Igss, Vgs(th), Rds(on) ,Vdss, Vgss, Vbr(ds), Cdg, Cgs, Cgd
3. DIODE: Ir, Id, Vr, Vf, Vsd.
AC: Switching/ Recovery/ Qg/ Roughness
1. Switching Board: td(on)/ tr/ td(off)/ tf /E(on)/ E(off)
2. Trr/Qrr Board: trr/ Qrr/ Irrm
3. dv/dt for MOSFET and Diode

Test Items

Power MOSFET Parameters

1. Absolute Maximum Ratings

1.1 Drain-Source Voltage(VDS)
1.2 Gate-Source Voltage (VGS)
1.3 Continuous Drain Current
1.4 Pulsed Drain Current (IDM)
1.5 Single Pulse Avalanche Current (IAS)
1.6 Single Pulse Avalanche Energy (EAS)
1.7 Total Power Dissipation (PD)
1.8 Operating Junction and Storage Temperature Range (TJ,TSTG)

2. Thermal Performance

2.1 Junction To Case Thermal Resistance (RθJC)
2.2 Junction To Ambient Thermal Resistance (RθJA)

3. Electrical Specifications

3.1 Drain-Source Breakdown Voltage (BVDSS)
3.2 Gate Threshold Voltage (VGS(TH))
3.3 Gate-Source Leakage Current (IGSS)
3.4 Drain-Source Leakage Current (IDSS)
3.5 Drain-Source On-State Resistance (RDS(ON))
3.6 Forward Transconductance (gfs)

4. Dynamic

4.1 Total Gate Charge (Qg)
4.2 Capactance (Ciss, Coss, Crss)
4.3 Gate Resistance (Rg)

5. Switching Time

5.1 Switching Time (Td(on) ,Tr ,Td(off) ,Tf)

6. Source-Drain Diode Characteristics

6.1 Forward Voltage (VSD)
6.2 Body Diode Reverse Recovery (trr,Qrr)

7. Characteristics Curves

Output Characteristics.
Transfer Characteristics .
Gate-Source Voltage vs. Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Current vs. Voltage
BVDSS vs. Junction Temperature
Capacitance vs. Drain-Source Voltage
SOA
Normalized Thermal Transient Impedance, Junction-to -Case